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650 V dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS fab

dc.contributor.authorKim, J.-Y.
dc.contributor.authorLee, D.
dc.contributor.authorKim, Y.S.
dc.contributor.authorSon, J.
dc.contributor.authorLuo, W.
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-24T06:55:53Z
dc.date.available2021-10-24T06:55:53Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28682
dc.sourceIIOimport
dc.title650 V dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS fab
dc.typeProceedings paper
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage172
dc.source.endpage174
dc.source.conference14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS
dc.source.conferencedate1/11/2017
dc.source.conferencelocationBeing China
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8246002/
imec.availabilityPublished - imec


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