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Electromigration threshold in damascene versus plasma-etched interconnects

dc.contributor.authorProost, Joris
dc.contributor.authorMaex, Karen
dc.contributor.authorDelaey, L.
dc.date.accessioned2021-10-01T08:44:18Z
dc.date.available2021-10-01T08:44:18Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2885
dc.sourceIIOimport
dc.titleElectromigration threshold in damascene versus plasma-etched interconnects
dc.typeJournal article
dc.contributor.imecauthorMaex, Karen
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2748
dc.source.endpage2750
dc.source.journalApplied Physics Letters
dc.source.issue19
dc.source.volume73
imec.availabilityPublished - open access


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