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Fundamentals of Ge1-xSnx and SiyGe1-x-ySnx RPCVD epitaxy

dc.contributor.authorMargetis, Joe
dc.contributor.authorMosleh, Aboozar
dc.contributor.authorGhetmiri, Seyed Amir
dc.contributor.authorAl-Kabi, Sattar
dc.contributor.authorDou, Wei
dc.contributor.authorDu, Wei
dc.contributor.authorBhargava, Nupur
dc.contributor.authorYu, Shui-Qing
dc.contributor.authorProfijt, Harald
dc.contributor.authorKohen, David
dc.contributor.authorLoo, Roger
dc.contributor.authorVohra, Anurag
dc.contributor.authorTolle, John
dc.date.accessioned2021-10-24T08:45:14Z
dc.date.available2021-10-24T08:45:14Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28916
dc.sourceIIOimport
dc.titleFundamentals of Ge1-xSnx and SiyGe1-x-ySnx RPCVD epitaxy
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVohra, Anurag
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.source.peerreviewyes
dc.source.beginpage38
dc.source.endpage43
dc.source.journalMaterial Science in Semiconcductor Processing
dc.source.volume70
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S1369800116306734
imec.availabilityPublished - imec


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