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Study of degradation mechanism by isothermal annealing of SOI FinFET after electron irradiation

dc.contributor.authorMatsuki, K.
dc.contributor.authorMatsuzaki, M.
dc.contributor.authorYoneoka, M.
dc.contributor.authorTsunoda, I.
dc.contributor.authorTakakura, Kenichiro
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-24T08:59:29Z
dc.date.available2021-10-24T08:59:29Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28946
dc.sourceIIOimport
dc.titleStudy of degradation mechanism by isothermal annealing of SOI FinFET after electron irradiation
dc.typeProceedings paper
dc.contributor.imecauthorTakakura, Kenichiro
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewyes
dc.source.conference29th International Conference on Defects in Semiconductors - ICDS
dc.source.conferencedate31/07/2017
dc.source.conferencelocationMatsue Japan
imec.availabilityPublished - imec


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