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Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry

dc.contributor.authorMeneghini, Matteo
dc.contributor.authorRossetto, Isabella
dc.contributor.authorBorga, Matteo
dc.contributor.authorCanato, Eleonora
dc.contributor.authorDe Santi, Carlo
dc.contributor.authorRampazzo, Fabiana
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-24T09:07:40Z
dc.date.available2021-10-24T09:07:40Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28962
dc.sourceIIOimport
dc.titleDegradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry
dc.typeProceedings paper
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage4B-5.1
dc.source.endpage4B-5.5
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/04/2017
dc.source.conferencelocationMonterey, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7936311/
imec.availabilityPublished - open access


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