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Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction
Publication:
Interaction between hot carrier aging and PBTI degradation in nMOSFETs: characterization, modelling and lifetime prediction
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Date
2017
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Meng, D.
;
Zhang, J. F.
;
Zhang, J. C.
;
Zhang, W.
;
Ji, Z.
;
Benbakhti, B.
;
Zheng, X. F.
;
Hao, Y.
;
Vigar, D.
;
Adamu-Lema, F.
;
Chandra, V.
;
Aitken, R.
;
Kaczer, Ben
;
Groeseneken, Guido
;
Asenov, A.
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1936
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Acq. date: 2025-12-09
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Views
1936
since deposited on 2021-10-24
1
last month
1
last week
Acq. date: 2025-12-09
Citations