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Accurate stoichiometric analysis of Al1 xGaxN/GaN structures using APT and the influence of laser, poles and zone lines

dc.contributor.authorMorris, Richard
dc.contributor.authorArnoldi, Laurent
dc.contributor.authorCuduvally, Ramya
dc.contributor.authorMelkonyan, Davit
dc.contributor.authorFleischmann, Claudia
dc.contributor.authorZhao, Ming
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-24T09:38:57Z
dc.date.available2021-10-24T09:38:57Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29023
dc.sourceIIOimport
dc.titleAccurate stoichiometric analysis of Al1 xGaxN/GaN structures using APT and the influence of laser, poles and zone lines
dc.typeOral presentation
dc.contributor.imecauthorMorris, Richard
dc.contributor.imecauthorCuduvally, Ramya
dc.contributor.imecauthorFleischmann, Claudia
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecMorris, Richard::0000-0002-0902-7088
dc.contributor.orcidimecFleischmann, Claudia::0000-0003-1531-6916
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.source.peerreviewno
dc.source.conference7th European Atom Probe Workshop
dc.source.conferencedate2/10/2017
dc.source.conferencelocationGullmarsstrand Sweden
imec.availabilityPublished - imec


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