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Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure

dc.contributor.authorNagahara, Seiji
dc.contributor.authorCarcasi, Michael
dc.contributor.authorShiraishi, Gosuke
dc.contributor.authorNakagawa, Hisashi
dc.contributor.authorDei, Satoshi
dc.contributor.authorShiozawa, Takahiro
dc.contributor.authorNafus, Kathleen
dc.contributor.authorDe Simone, Danilo
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorStock, Hans-Jürgen
dc.contributor.authorKüchler, Bernd
dc.contributor.authorHori, Masafumi
dc.contributor.authorNaruoka, Takehiko
dc.contributor.authorNagai, Tomoki
dc.contributor.authorMinekawa, Yukie
dc.contributor.authorIseki, Tomohiri
dc.contributor.authorKondo, Yoshihiro
dc.contributor.authorYoshihara, Kosuke
dc.contributor.authorKamei, Yuya
dc.contributor.authorTomono, Masaru
dc.contributor.authorShimada, Ryo
dc.contributor.authorBiesemans, Serge
dc.contributor.authorNakashima, Hideo
dc.contributor.authorFoubert, Philippe
dc.contributor.authorBuitrago, Elizabeth
dc.contributor.authorVockenhuber, Michaela
dc.contributor.authorEkinci, Yasin
dc.contributor.authorOshima, Akihiro
dc.contributor.authorTagawa, Seiichi
dc.date.accessioned2021-10-24T09:57:09Z
dc.date.available2021-10-24T09:57:09Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29057
dc.sourceIIOimport
dc.titlePhotosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure
dc.typeProceedings paper
dc.contributor.imecauthorNafus, Kathleen
dc.contributor.imecauthorDe Simone, Danilo
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.imecauthorNaruoka, Takehiko
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorFoubert, Philippe
dc.contributor.orcidimecDe Simone, Danilo::0000-0003-3927-5207
dc.identifier.doi10.1117/12.2258217
dc.source.peerreviewyes
dc.source.beginpage101460G
dc.source.conferenceAdvances in Patterning Materials and Processes XXXIV
dc.source.conferencedate26/02/2017
dc.source.conferencelocationSan Jose, CA USA
imec.availabilityPublished - imec
imec.internalnotesProceedings of SPIE; Vol. 10146


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