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Low temperature influence on long channel STI last process relaxed and strained Ge pFinFETs

dc.contributor.authorOliveira, Alberto
dc.contributor.authorAgopian, Paula
dc.contributor.authorMartino, Joao
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-24T10:24:37Z
dc.date.available2021-10-24T10:24:37Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29109
dc.sourceIIOimport
dc.titleLow temperature influence on long channel STI last process relaxed and strained Ge pFinFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage3
dc.source.conferenceIEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - S3S
dc.source.conferencedate16/10/2017
dc.source.conferencelocationBurlingame, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8309245/
imec.availabilityPublished - open access


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