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Orthorhombic phase formation in doped HfO2 for ferroelectric field effect transistor applications

dc.contributor.authorPopovici, Mihaela Ioana
dc.date.accessioned2021-10-24T11:16:40Z
dc.date.available2021-10-24T11:16:40Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29204
dc.sourceIIOimport
dc.titleOrthorhombic phase formation in doped HfO2 for ferroelectric field effect transistor applications
dc.typeMeeting abstract
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.orcidimecPopovici, Mihaela Ioana::0000-0002-9838-1088
dc.source.peerreviewno
dc.source.conferenceSEMICON Europa, Materials Conference
dc.source.conferencedate14/11/2017
dc.source.conferencelocationMünchen Germany
imec.availabilityPublished - imec


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