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Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method

dc.contributor.authorPriesol, Juraj
dc.contributor.authorSatka, Alexander
dc.contributor.authorChvala, A.
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-24T11:26:28Z
dc.date.available2021-10-24T11:26:28Z
dc.date.issued2017-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29221
dc.sourceIIOimport
dc.titleIdentification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method
dc.typeProceedings paper
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conference41st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate21/05/2017
dc.source.conferencelocationLas Palmas de Gran Canaria Spain
imec.availabilityPublished - imec


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