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Record performance top-down In0.53Ga0.47As vertical nanowire FETs and vertical nanosheets

dc.contributor.authorRamesh, Siva
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorAlian, AliReza
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorRooyackers, Rita
dc.contributor.authorCamerotto, Elisabeth
dc.contributor.authorMilenin, Alexey
dc.contributor.authorPinna, Nicolo
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorVeloso, Anabela
dc.contributor.authorLin, Dennis
dc.contributor.authorLagrain, Pieter
dc.contributor.authorFavia, Paola
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-24T11:50:22Z
dc.date.available2021-10-24T11:50:22Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29263
dc.sourceIIOimport
dc.titleRecord performance top-down In0.53Ga0.47As vertical nanowire FETs and vertical nanosheets
dc.typeProceedings paper
dc.contributor.imecauthorRamesh, Siva
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorCamerotto, Elisabeth
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorPinna, Nicolo
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorLagrain, Pieter
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecRamesh, Siva::0000-0002-8473-7258
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecPinna, Nicolo::0000-0003-3392-0324
dc.contributor.orcidimecLagrain, Pieter::0000-0003-3734-7203
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage409
dc.source.endpage412
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate2/12/2017
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8268406/
imec.availabilityPublished - imec


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