Show simple item record

Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level

dc.contributor.authorRossetto, Isabella
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorCanato, E.
dc.contributor.authorBarbato, M.
dc.contributor.authorStoffels, Steve
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorTallarico, Andrea
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-24T12:26:35Z
dc.date.available2021-10-24T12:26:35Z
dc.date.issued2017
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29326
dc.sourceIIOimport
dc.titleField- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level
dc.typeJournal article
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage298
dc.source.endpage303
dc.source.journalMicroelectronics Reliability
dc.source.volume76-77
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S0026271417302494
imec.availabilityPublished - imec
imec.internalnotesPaper from ESREF 2017


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record