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Hot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion approach

dc.contributor.authorSharma, Prateek
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorRauch, Stewart E. III
dc.contributor.authorFranco, Jacopo
dc.contributor.authorMakarov, Alexander
dc.contributor.authorVexler, Mikhail I.
dc.contributor.authorKaczer, Ben
dc.contributor.authorGrasser, Tibor
dc.date.accessioned2021-10-24T13:23:43Z
dc.date.available2021-10-24T13:23:43Z
dc.date.issued2017
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29422
dc.sourceIIOimport
dc.titleHot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion approach
dc.typeJournal article
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage160
dc.source.endpage163
dc.source.journalIEEE Electron Device Letters
dc.source.issue2
dc.source.volume38
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7801021/
imec.availabilityPublished - open access


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