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Subthreshold region analysis for UTBOX and UTBB SOI nMOSFETs with different channel lengths and silicon thickness

dc.contributor.authorSilva, V.C.P.
dc.contributor.authorSonnenberg, V.
dc.contributor.authorMartino, J.A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorAgopian, P.G.D.
dc.date.accessioned2021-10-24T13:32:22Z
dc.date.available2021-10-24T13:32:22Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29436
dc.sourceIIOimport
dc.titleSubthreshold region analysis for UTBOX and UTBB SOI nMOSFETs with different channel lengths and silicon thickness
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conference32nd Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate28/08/2017
dc.source.conferencelocationFortaleza Brazil
imec.availabilityPublished - open access


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