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Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorPorret, Clément
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorShimura, Yosuke
dc.contributor.authorGieregat, Pieter
dc.contributor.authorLoo, Roger
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorVan Thourhout, Dries
dc.date.accessioned2021-10-24T14:05:22Z
dc.date.available2021-10-24T14:05:22Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29489
dc.sourceIIOimport
dc.titleAnalysis of homogeneous broadening in n-type doped Ge layers on Si for laser application
dc.typeProceedings paper
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage311
dc.source.endpage312
dc.source.conference30th Annual Conference of the IEEE Photonics Society - IPC
dc.source.conferencedate1/10/2017
dc.source.conferencelocationLake Buona Vista, FL USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8116120/
imec.availabilityPublished - open access


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