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Next generation 200mm substrates for GaN power devices

dc.contributor.authorStoffels, Steve
dc.contributor.authorGeens, Karen
dc.contributor.authorZhao, Ming
dc.contributor.authorLiang, Hu
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-24T14:18:04Z
dc.date.available2021-10-24T14:18:04Z
dc.date.issued2017-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29509
dc.sourceIIOimport
dc.titleNext generation 200mm substrates for GaN power devices
dc.typeProceedings paper
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conference41st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate21/05/2017
dc.source.conferencelocationLas Palmas de Gran Canaria Spain
imec.availabilityPublished - imec


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