dc.contributor.author | Swerts, Johan | |
dc.contributor.author | Couet, Sebastien | |
dc.contributor.author | Liu, Enlong | |
dc.contributor.author | Mertens, Sofie | |
dc.contributor.author | Lin, Tsann | |
dc.contributor.author | Rao, Siddharth | |
dc.contributor.author | Kim, Woojin | |
dc.contributor.author | Van Elshocht, Sven | |
dc.contributor.author | Furnemont, Arnaud | |
dc.contributor.author | Kar, Gouri Sankar | |
dc.date.accessioned | 2021-10-24T14:32:32Z | |
dc.date.available | 2021-10-24T14:32:32Z | |
dc.date.issued | 2017 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/29532 | |
dc.source | IIOimport | |
dc.title | Perpendicular magnetic tunnel junction stacks with high annealing tolerance for high density memory applications | |
dc.type | Meeting abstract | |
dc.contributor.imecauthor | Swerts, Johan | |
dc.contributor.imecauthor | Couet, Sebastien | |
dc.contributor.imecauthor | Mertens, Sofie | |
dc.contributor.imecauthor | Rao, Siddharth | |
dc.contributor.imecauthor | Kim, Woojin | |
dc.contributor.imecauthor | Van Elshocht, Sven | |
dc.contributor.imecauthor | Furnemont, Arnaud | |
dc.contributor.imecauthor | Kar, Gouri Sankar | |
dc.contributor.orcidimec | Couet, Sebastien::0000-0001-6436-9593 | |
dc.contributor.orcidimec | Mertens, Sofie::0000-0002-1482-6730 | |
dc.contributor.orcidimec | Rao, Siddharth::0000-0001-6161-3052 | |
dc.contributor.orcidimec | Van Elshocht, Sven::0000-0002-6512-1909 | |
dc.contributor.orcidimec | Furnemont, Arnaud::0000-0002-6378-1030 | |
dc.source.peerreview | yes | |
dc.source.conference | York-Tohoku-Kaiserslautern Research Symposium on New-Concept Spintronics Devices | |
dc.source.conferencedate | 21/06/2017 | |
dc.source.conferencelocation | York UK | |
imec.availability | Published - imec | |