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Asymmetry and aging of ZnS EL devices deposited with atomic layer epitaxy from various precursors

dc.contributor.authorSoenen, B.
dc.contributor.authorDe Visschere, Patrick
dc.contributor.authorNeyts, K.
dc.contributor.authorStuyven, G.
dc.date.accessioned2021-10-01T08:58:12Z
dc.date.available2021-10-01T08:58:12Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2959
dc.sourceIIOimport
dc.titleAsymmetry and aging of ZnS EL devices deposited with atomic layer epitaxy from various precursors
dc.typeProceedings paper
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage307
dc.source.endpage310
dc.source.conference9th International Workshop on Inorganic and Organic Electroluminescence
dc.source.conferencedate14/09/1998
dc.source.conferencelocationBend, OR USA
imec.availabilityPublished - open access


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