dc.contributor.author | Vais, Abhitosh | |
dc.contributor.author | Franco, Jacopo | |
dc.contributor.author | Martens, Koen | |
dc.contributor.author | Lin, Dennis | |
dc.contributor.author | Sioncke, Sonja | |
dc.contributor.author | Putcha, Vamsi | |
dc.contributor.author | Nyns, Laura | |
dc.contributor.author | Maes, Jan | |
dc.contributor.author | Xie, Qi | |
dc.contributor.author | Givens, Michael | |
dc.contributor.author | Tang, Fu | |
dc.contributor.author | Jiang, Xiaoqiang | |
dc.contributor.author | Mocuta, Anda | |
dc.contributor.author | Collaert, Nadine | |
dc.contributor.author | Thean, Aaron | |
dc.contributor.author | De Meyer, Kristin | |
dc.date.accessioned | 2021-10-24T15:26:04Z | |
dc.date.available | 2021-10-24T15:26:04Z | |
dc.date.issued | 2017 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/29616 | |
dc.source | IIOimport | |
dc.title | A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET | |
dc.type | Journal article | |
dc.contributor.imecauthor | Vais, Abhitosh | |
dc.contributor.imecauthor | Franco, Jacopo | |
dc.contributor.imecauthor | Martens, Koen | |
dc.contributor.imecauthor | Lin, Dennis | |
dc.contributor.imecauthor | Putcha, Vamsi | |
dc.contributor.imecauthor | Nyns, Laura | |
dc.contributor.imecauthor | Maes, Jan | |
dc.contributor.imecauthor | Xie, Qi | |
dc.contributor.imecauthor | Givens, Michael | |
dc.contributor.imecauthor | Collaert, Nadine | |
dc.contributor.imecauthor | Thean, Aaron | |
dc.contributor.imecauthor | De Meyer, Kristin | |
dc.contributor.orcidimec | Vais, Abhitosh::0000-0002-0317-7720 | |
dc.contributor.orcidimec | Franco, Jacopo::0000-0002-7382-8605 | |
dc.contributor.orcidimec | Martens, Koen::0000-0001-7135-5536 | |
dc.contributor.orcidimec | Putcha, Vamsi::0000-0003-1907-5486 | |
dc.contributor.orcidimec | Nyns, Laura::0000-0001-8220-870X | |
dc.contributor.orcidimec | Collaert, Nadine::0000-0002-8062-3165 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 318 | |
dc.source.endpage | 321 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 3 | |
dc.source.volume | 38 | |
dc.identifier.url | http://ieeexplore.ieee.org/document/7833041/ | |
imec.availability | Published - open access | |