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Impact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substrates

dc.contributor.authorVan Hove, Marleen
dc.contributor.authorPosthuma, Niels
dc.contributor.authorGeens, Karen
dc.contributor.authorWellekens, Dirk
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-24T16:21:47Z
dc.date.available2021-10-24T16:21:47Z
dc.date.issued2017-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29705
dc.sourceIIOimport
dc.titleImpact of crystal orientation on ohmic contact resistance of enhancement-mode pGaN gate high electron mobility transistors on 200 mm Si substrates
dc.typeProceedings paper
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.beginpage647
dc.source.endpage648
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate19/09/2017
dc.source.conferencelocationSendai Japan
dc.identifier.urlhttps://confit.atlas.jp/guide/event/ssdm2017/top?lang=en
imec.availabilityPublished - imec


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