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Advances on doping strategies for triple-gate FinFETs and lateral gate-all-around nanowire FETs and their impact on device performance

dc.contributor.authorVeloso, Anabela
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorMatagne, Philippe
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-24T17:28:44Z
dc.date.available2021-10-24T17:28:44Z
dc.date.issued2017
dc.identifier.issn1369-8001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29808
dc.sourceIIOimport
dc.titleAdvances on doping strategies for triple-gate FinFETs and lateral gate-all-around nanowire FETs and their impact on device performance
dc.typeJournal article
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage2
dc.source.endpage12
dc.source.journalMaterials Science in Semiconductor Processing
dc.source.volume62
dc.identifier.urlhttp://www.sciencedirect.com/science/article/pii/S1369800116304358
imec.availabilityPublished - imec


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