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Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors

dc.contributor.authorVerreck, Devin
dc.contributor.authorVerhulst, Anne
dc.contributor.authorVan de Put, Maarten L.
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Anda
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-24T18:06:07Z
dc.date.available2021-10-24T18:06:07Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29861
dc.sourceIIOimport
dc.titleSelf-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors
dc.typeProceedings paper
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage29
dc.source.endpage32
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate7/09/2017
dc.source.conferencelocationKamakura Japan
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8085256/
imec.availabilityPublished - open access


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