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Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation

dc.contributor.authorWang, Linlin
dc.contributor.authorYu, Hao
dc.contributor.authorSchaekers, Marc
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorFranquet, Alexis
dc.contributor.authorDouhard, Bastien
dc.contributor.authorDate, Lucien
dc.contributor.authordel Agua Borniquel, Jose Ignacio
dc.contributor.authorHollar, Kelly
dc.contributor.authorKhaja, Fareen
dc.contributor.authorAderhold, Wolfgang
dc.contributor.authorMayur, Abhilash
dc.contributor.authorLee, J.Y.
dc.contributor.authorvan Meer, Hans
dc.contributor.authorMocuta, Dan
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorJiang, Yu-Long
dc.date.accessioned2021-10-24T18:30:05Z
dc.date.available2021-10-24T18:30:05Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29896
dc.sourceIIOimport
dc.titleComprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
dc.typeProceedings paper
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorDate, Lucien
dc.contributor.imecauthordel Agua Borniquel, Jose Ignacio
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage550
dc.source.endpage552
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate2/12/2017
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8268441/
imec.availabilityPublished - open access


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