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Widely tunable 2.3 μm InP-based type-II DFB laser array heterogeneously integrated in silicon for sensing

dc.contributor.authorWang, Ruijun
dc.contributor.authorSprengel, S.
dc.contributor.authorBoehm, G.
dc.contributor.authorBaets, Roel
dc.contributor.authorAmann, M.C.
dc.contributor.authorRoelkens, Gunther
dc.date.accessioned2021-10-24T18:34:47Z
dc.date.available2021-10-24T18:34:47Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29903
dc.sourceIIOimport
dc.titleWidely tunable 2.3 μm InP-based type-II DFB laser array heterogeneously integrated in silicon for sensing
dc.typeProceedings paper
dc.contributor.imecauthorBaets, Roel
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecBaets, Roel::0000-0003-1266-1319
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage25
dc.source.conferenceInternational Workshop on Opportunities and Challenges in Mid-Infrared Laser-Based Gas Sensing - MIRSENS 4
dc.source.conferencedate15/05/2017
dc.source.conferencelocationWroclaw Poland
imec.availabilityPublished - imec


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