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The impact of dummy gate processing on Si-cap-free SiGe passivation: a physical characterization study on strained SiGe 25% and 45%

dc.contributor.authorWostyn, Kurt
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSchram, Tom
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorConard, Thierry
dc.contributor.authorDouhard, Bastien
dc.contributor.authorVanhaeren, Danielle
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-24T19:05:51Z
dc.date.available2021-10-24T19:05:51Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29946
dc.sourceIIOimport
dc.titleThe impact of dummy gate processing on Si-cap-free SiGe passivation: a physical characterization study on strained SiGe 25% and 45%
dc.typeMeeting abstract
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorVanhaeren, Danielle
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecVanhaeren, Danielle::0000-0001-8624-9533
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage1071
dc.source.conferenceECS 2017 Fall Meeting - 15th International Symposium on Semiconductor Cleaning Science and Technology - SCST15
dc.source.conferencedate1/10/2017
dc.source.conferencelocationNational Harbor, MD USA
dc.identifier.urlhttp://ma.ecsdl.org/content/MA2017-02/24/1071.abstract
imec.availabilityPublished - imec
imec.internalnotesECS Meeting Abstracts; Vol. MA2017-02


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