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Evaluation of Si surface conditions by the use of surface photovoltage technique

dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorKenis, Karine
dc.contributor.authorCaymax, Matty
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.contributor.authorVanhellemont, J.
dc.contributor.authorGräf, D.
dc.contributor.authorWagner, P.
dc.date.accessioned2021-10-01T09:06:37Z
dc.date.available2021-10-01T09:06:37Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2998
dc.sourceIIOimport
dc.titleEvaluation of Si surface conditions by the use of surface photovoltage technique
dc.typeProceedings paper
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage455
dc.source.endpage462
dc.source.conferenceProceedings of the 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing
dc.source.conferencedate31/08/1997
dc.source.conferencelocationParis France
imec.availabilityPublished - open access
imec.internalnotesElectrochemical Society Proceedings; Vol. 97-35


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