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Total ionizing dose effects on strained Ge pMOS FinFETS on bulk Si

dc.contributor.authorZhang, E. Z
dc.contributor.authorFleetwood, D. M.
dc.contributor.authorHatchel, J. A.
dc.contributor.authorLiang, C.
dc.contributor.authorReed, R.
dc.contributor.authorAlles, M. L.
dc.contributor.authorSchrimpf, R. D.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorChisholm, M. F.
dc.contributor.authorPantelides, S. T.
dc.date.accessioned2021-10-24T19:54:07Z
dc.date.available2021-10-24T19:54:07Z
dc.date.issued2017
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30013
dc.sourceIIOimport
dc.titleTotal ionizing dose effects on strained Ge pMOS FinFETS on bulk Si
dc.typeJournal article
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage226
dc.source.endpage232
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue1
dc.source.volume64
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7765121/
imec.availabilityPublished - open access


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