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MOCVD growth and characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration

dc.contributor.authorZhao, Ming
dc.contributor.authorGeens, Karen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLempinen, Vesa-Pekka
dc.contributor.authorSormunen, Jaakko
dc.contributor.authorLanger, Robert
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-24T20:03:38Z
dc.date.available2021-10-24T20:03:38Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30026
dc.sourceIIOimport
dc.titleMOCVD growth and characterization of 200 V E-mode p-GaN HEMTs on 200 mm GaN-on-SOI for monolithic integration
dc.typeMeeting abstract
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.source.peerreviewyes
dc.source.conference12th International Conference on Nitride Semiconductors - ICNS
dc.source.conferencedate24/07/2017
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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