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dc.contributor.authorArimura, Hiroaki
dc.contributor.authorEneman, Geert
dc.contributor.authorCapogreco, Elena
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorFavia, Paola
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorBender, Hugo
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorMitard, Jerome
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Dan
dc.contributor.authorHoriguchi, Naoto
dc.date.accessioned2021-10-25T16:34:21Z
dc.date.available2021-10-25T16:34:21Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30143
dc.sourceIIOimport
dc.titleAdvantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET
dc.typeProceedings paper
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewyes
dc.source.beginpage496
dc.source.endpage499
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate1/12/2018
dc.source.conferencelocationSan Francisco, CA USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614712
imec.availabilityPublished - imec


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