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The influence of carbon in the back-barrier layers on the surface electric field peaks in GaN Schottky diodes

dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorStoffels, Steve
dc.contributor.authorZhao, Ming
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-25T16:37:57Z
dc.date.available2021-10-25T16:37:57Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30189
dc.sourceIIOimport
dc.titleThe influence of carbon in the back-barrier layers on the surface electric field peaks in GaN Schottky diodes
dc.typeProceedings paper
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage240
dc.source.endpage243
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate24/09/2018
dc.source.conferencelocationAustin, TX USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8551652
imec.availabilityPublished - open access


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