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Analytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors

dc.contributor.authorBakeroot, Benoit
dc.contributor.authorStockman, Arno
dc.contributor.authorPosthuma, Niels
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-10-25T16:38:03Z
dc.date.available2021-10-25T16:38:03Z
dc.date.issued2018
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30190
dc.sourceIIOimport
dc.titleAnalytical model for the threshold voltage of p-(Al)GaN high-electron-mobility transistors
dc.typeJournal article
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorStockman, Arno
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage79
dc.source.endpage86
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue1
dc.source.volume65
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8141943/
imec.availabilityPublished - open access


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