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Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate

dc.contributor.authorBorga, Matteo
dc.contributor.authorMeneghini, Matteo
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorLi, Xiangdong
dc.contributor.authorZhao, Ming
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.date.accessioned2021-10-25T16:52:27Z
dc.date.available2021-10-25T16:52:27Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30302
dc.sourceIIOimport
dc.titleAnalysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate
dc.typeProceedings paper
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorZhao, Ming
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.source.peerreviewyes
dc.source.beginpage38
dc.source.endpage39
dc.source.conferenceGaN Marathon 2.0
dc.source.conferencedate18/04/2018
dc.source.conferencelocationPadova Italy
imec.availabilityPublished - imec


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