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Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

dc.contributor.authorBoudier, Dimitri
dc.contributor.authorCretu, Bogdan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorCollaert, Nadine
dc.date.accessioned2021-10-25T16:53:53Z
dc.date.available2021-10-25T16:53:53Z
dc.date.issued2018
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30311
dc.sourceIIOimport
dc.titleDetailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage27
dc.source.endpage32
dc.source.journalSolid-State Electronics
dc.source.volume143
dc.identifier.urlhttps://www.sciencedirect.com/science/article/pii/S0038110117306561
imec.availabilityPublished - imec


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