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High indium content InGaN films and quantum wells

dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorJacobs, Koen
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorConsidine, L.
dc.contributor.authorThrush, E. J.
dc.contributor.authorCrawley, J. A.
dc.contributor.authorRuterana, P.
dc.date.accessioned2021-10-01T09:14:00Z
dc.date.available2021-10-01T09:14:00Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3031
dc.sourceIIOimport
dc.titleHigh indium content InGaN films and quantum wells
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage107
dc.source.endpage112
dc.source.conferenceNitride Semiconductors
dc.source.conferencedate1/12/1997
dc.source.conferencelocationBostin, MA USA
imec.availabilityPublished - open access
imec.internalnotesMRS Symposium Proceedings; Vol. 482


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