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The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique

dc.contributor.authorChai, Zheng
dc.contributor.authorZhang, Weidong
dc.contributor.authorFreitas, Pedro
dc.contributor.authorHatem, Firas
dc.contributor.authorZhang, Jian Fu
dc.contributor.authorMarsland, John
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorHall, Steve
dc.contributor.authorChalker, Paul
dc.contributor.authorRobertson, john
dc.date.accessioned2021-10-25T17:07:06Z
dc.date.available2021-10-25T17:07:06Z
dc.date.issued2018
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30380
dc.sourceIIOimport
dc.titleThe over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique
dc.typeJournal article
dc.contributor.imecauthorFreitas, Pedro
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.source.peerreviewyes
dc.source.beginpage955
dc.source.endpage958
dc.source.journalIEEE Electron Device Letters
dc.source.issue7
dc.source.volume39
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8354795
imec.availabilityPublished - imec


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