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GdAlO3: a promising high-k dielectric for reliable gate stacks at low thermal budget

dc.contributor.authorClaes, Dieter
dc.contributor.authorFranco, Jacopo
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLinten, Dimitri
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-25T17:19:36Z
dc.date.available2021-10-25T17:19:36Z
dc.date.issued2018-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30435
dc.sourceIIOimport
dc.titleGdAlO3: a promising high-k dielectric for reliable gate stacks at low thermal budget
dc.typeMeeting abstract
dc.contributor.imecauthorClaes, Dieter
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conferenceIEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate6/12/2018
dc.source.conferencelocationSan Diego USA
dc.identifier.urlhttp://www.ieeesisc.org/programs/2018_SISC_technical_preliminary-program.pdf
imec.availabilityPublished - open access


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