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dc.contributor.authorClima, Sergiu
dc.contributor.authorMcMitchell, Sean
dc.contributor.authorFlorent, Karine
dc.contributor.authorNyns, Laura
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorDi Piazza, Luca
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-25T17:21:45Z
dc.date.available2021-10-25T17:21:45Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30444
dc.sourceIIOimport
dc.titleFirst-principles perspective on poling mechanisms and ferroelectric/ antiferroelectric behavior of Hf1-xZrxO2 for FEFET applications
dc.typeProceedings paper
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorMcMitchell, Sean
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorDi Piazza, Luca
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewyes
dc.source.beginpage380
dc.source.endpage383
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate1/12/2018
dc.source.conferencelocationSan Francisco, Ca USA
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614552
imec.availabilityPublished - imec


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