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Electronic properties and conduction defects from first principles in doped GexSe1-x materials for selector applications

dc.contributor.authorClima, Sergiu
dc.contributor.authorOpsomer, Karl
dc.contributor.authorDevulder, Wouter
dc.contributor.authorGoux, Ludovic
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorPourtois, Geoffrey
dc.date.accessioned2021-10-25T17:21:59Z
dc.date.available2021-10-25T17:21:59Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30445
dc.sourceIIOimport
dc.titleElectronic properties and conduction defects from first principles in doped GexSe1-x materials for selector applications
dc.typeOral presentation
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorDevulder, Wouter
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.contributor.orcidimecDevulder, Wouter::0000-0002-5156-0177
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewno
dc.source.conference8th International Workshop on Resistive Switching Memory
dc.source.conferencedate4/10/2018
dc.source.conferencelocationStanford, CA USA
imec.availabilityPublished - imec


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