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Mid-infrared LEDs using InAs(0.71)Sb(0.29)/InAs(0.25)In(0.75)As/inAs strained layer superlatticed active layers

dc.contributor.authorVan Hoof, Chris
dc.contributor.authorNemeth, Stefan
dc.contributor.authorGrietens, Bob
dc.contributor.authorDessein, Kristof
dc.contributor.authorGenoe, Jan
dc.contributor.authorMerken, Patrick
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorFuchs, F.
dc.contributor.authorWagner, J.
dc.date.accessioned2021-10-01T09:18:22Z
dc.date.available2021-10-01T09:18:22Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3048
dc.sourceIIOimport
dc.titleMid-infrared LEDs using InAs(0.71)Sb(0.29)/InAs(0.25)In(0.75)As/inAs strained layer superlatticed active layers
dc.typeProceedings paper
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorNemeth, Stefan
dc.contributor.imecauthorGenoe, Jan
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage287
dc.source.endpage290
dc.source.conferenceASDAM '98, Conference Proceedings 2nd International Conference on Advanced Semiconductor Devices and Microsystems
dc.source.conferencedate5/10/1998
dc.source.conferencelocationSmolenice Castle Slovakia
imec.availabilityPublished - open access


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