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EUV photoresist patterning characterization for imec N7/N5 technology

dc.contributor.authorDe Simone, Danilo
dc.contributor.authorRutigliani, Vito
dc.contributor.authorLorusso, Gian
dc.contributor.authorDe Bisschop, Peter
dc.contributor.authorVesters, Yannick
dc.contributor.authorBlanco, Victor
dc.contributor.authorVandenberghe, Geert
dc.date.accessioned2021-10-25T17:49:46Z
dc.date.available2021-10-25T17:49:46Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30553
dc.sourceIIOimport
dc.titleEUV photoresist patterning characterization for imec N7/N5 technology
dc.typeProceedings paper
dc.contributor.imecauthorDe Simone, Danilo
dc.contributor.imecauthorLorusso, Gian
dc.contributor.imecauthorDe Bisschop, Peter
dc.contributor.imecauthorBlanco, Victor
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.orcidimecDe Simone, Danilo::0000-0003-3927-5207
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage105830G
dc.source.conferenceExtreme Ultraviolet (EUV) Lithography IX
dc.source.conferencedate26/02/2018
dc.source.conferencelocationSan Jose, CA USA
dc.identifier.urlhttps://doi.org/10.1117/12.2299504
imec.availabilityPublished - open access
imec.internalnotesProceedings of SPIE; Vol. 10583


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