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Ground Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs

dc.contributor.authorGoncalves, G.V.
dc.contributor.authorOliveira, A.V.
dc.contributor.authorAgopian, P.G.D.
dc.contributor.authorMartino, J.A.
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-25T19:06:14Z
dc.date.available2021-10-25T19:06:14Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30780
dc.sourceIIOimport
dc.titleGround Plane Impact on the Threshold Voltage of Relaxed Ge pFinFETs
dc.typeProceedings paper
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conference33rd Symposium on Microelectronics Technology and Devices (SBMicro)
dc.source.conferencedate27/08/2018
dc.source.conferencelocationBento Goncalves Brazil
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8511544
imec.availabilityPublished - open access


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