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Contact resistivities at graphene/MoS2 lateral heterojunctions

dc.contributor.authorHoussa, Michel
dc.contributor.authorIordanidou, K.
dc.contributor.authorDabral, Ashish
dc.contributor.authorLu, A.
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.date.accessioned2021-10-25T19:57:49Z
dc.date.available2021-10-25T19:57:49Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30910
dc.sourceIIOimport
dc.titleContact resistivities at graphene/MoS2 lateral heterojunctions
dc.typeProceedings paper
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDabral, Ashish
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage715
dc.source.endpage716
dc.source.conference50th Solid State Devices and Materials Conference - SSDM
dc.source.conferencedate9/09/2018
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - open access


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