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Trap-Assisted-Tunneling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p-n junctions

dc.contributor.authorHsu, Brent
dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorMerckling, Clement
dc.contributor.authorMols, Yves
dc.contributor.authorAlian, AliReza
dc.contributor.authorLanger, Robert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-25T19:58:16Z
dc.date.available2021-10-25T19:58:16Z
dc.date.issued2018-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30911
dc.sourceIIOimport
dc.titleTrap-Assisted-Tunneling and Shockley-Read-Hall lifetime of extended defects in In.53Ga.47As p-n junctions
dc.typeProceedings paper
dc.contributor.imecauthorHsu, Brent
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecHsu, Brent::0000-0003-0823-6088
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.conferenceExtended Defects in Semiconductors - EDS
dc.source.conferencedate24/06/2018
dc.source.conferencelocationSanta Clara, CA USA
imec.availabilityPublished - imec


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