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dc.contributor.authorJiang, Rong
dc.contributor.authorZhang, En Xia
dc.contributor.authorLiao, Wenjun
dc.contributor.authorLiang, Chundong
dc.contributor.authorFleetwood, Daniel
dc.contributor.authorSchrimpf, Ronald
dc.contributor.authorReed, Robert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSioncke, Sonja
dc.contributor.authorWaldron, Niamh
dc.date.accessioned2021-10-25T20:25:04Z
dc.date.available2021-10-25T20:25:04Z
dc.date.issued2018
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30972
dc.sourceIIOimport
dc.titleCapacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors
dc.typeJournal article
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewyes
dc.source.beginpage175
dc.source.endpage183
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue1
dc.source.volume65
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8063356/
imec.availabilityPublished - imec


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