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Backscattering/channeling study of high-dose rare-earth implants into Si

dc.contributor.authorVantomme, Andre
dc.contributor.authorWahl, U.
dc.contributor.authorWu, Ming Fang
dc.contributor.authorHogg, S.
dc.contributor.authorPattyn, Hugo
dc.contributor.authorLangouche, G.
dc.contributor.authorBender, Hugo
dc.date.accessioned2021-10-01T09:33:04Z
dc.date.available2021-10-01T09:33:04Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3102
dc.sourceIIOimport
dc.titleBackscattering/channeling study of high-dose rare-earth implants into Si
dc.typeJournal article
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorPattyn, Hugo
dc.contributor.imecauthorBender, Hugo
dc.source.peerreviewno
dc.source.beginpage471
dc.source.endpage477
dc.source.journalNuclear Instruments and Methods. B
dc.source.volume138
imec.availabilityPublished - imec


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