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Manifestation of vacancy-As complexes in As doped GeSn epilayers

dc.contributor.authorKhanam, Afrina
dc.contributor.authorSlotte, Jonatan
dc.contributor.authorVohra, Anurag
dc.contributor.authorLoo, Roger
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-25T20:57:34Z
dc.date.available2021-10-25T20:57:34Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31046
dc.sourceIIOimport
dc.titleManifestation of vacancy-As complexes in As doped GeSn epilayers
dc.typeMeeting abstract
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.source.peerreviewno
dc.source.beginpageU.P.12
dc.source.conferenceEuropean Materials Research Society Fall Meeting Symposium U: Monolithic and Heterogeneous Integration of Advanced Materials ..
dc.source.conferencedate17/09/2018
dc.source.conferencelocationWarsaw Poland
imec.availabilityPublished - imec


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