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Insight into the mechanism of tail bits in data retention of vacancy-modulated conductive oxide RRAM

dc.contributor.authorKoh, Sang Gyu
dc.contributor.authorKurihara, Kazuaki
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.date.accessioned2021-10-25T21:07:30Z
dc.date.available2021-10-25T21:07:30Z
dc.date.issued2018
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31067
dc.sourceIIOimport
dc.titleInsight into the mechanism of tail bits in data retention of vacancy-modulated conductive oxide RRAM
dc.typeJournal article
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage480
dc.source.endpage483
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume39
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8304702/
imec.availabilityPublished - open access


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