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Insight into the mechanism of tail bits in data retention of vacancy-modulated conductive oxide RRAM
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Insight into the mechanism of tail bits in data retention of vacancy-modulated conductive oxide RRAM
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Date
2018
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Koh, Sang Gyu
;
Kurihara, Kazuaki
;
Belmonte, Attilio
;
Popovici, Mihaela Ioana
;
Donadio, Gabriele Luca
;
Goux, Ludovic
;
Kar, Gouri Sankar
Journal
IEEE Electron Device Letters
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1884
since deposited on 2021-10-25
2
last month
Acq. date: 2025-12-16
Citations