Publication:

Insight into the mechanism of tail bits in data retention of vacancy-modulated conductive oxide RRAM

Date

2018
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorKoh, Sang Gyu
dc.contributor.authorKurihara, Kazuaki
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorDonadio, Gabriele Luca
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorDonadio, Gabriele Luca
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-25T21:07:30Z
dc.date.available2021-10-25T21:07:30Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31067
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8304702/
dc.source.beginpage480
dc.source.endpage483
dc.source.issue4
dc.source.journalIEEE Electron Device Letters
dc.source.volume39
dc.title

Insight into the mechanism of tail bits in data retention of vacancy-modulated conductive oxide RRAM

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
37309.pdf
Size:
1.03 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles